silicon plastic power transistor npn 2SC2233 4a 40w technical data ?esigned for use in b/w tv horizontal deflection output. f collector-base voltage: v cbo =200v f dc current gain: 20 @ i c =4a f to-220 package maximum ratings rating symbol value unit collector- emitter voltage v ceo 60 vdc collector ?base voltage v cb 200 vdc emitter base voltage v eb 5 vdc collector current ?continuos i c 4 adc base current i b 2 adc total power dissipation @ tc = 25 c derate above 25 c pd 40 0.32 watts w/ c operating and storage junction temperature range tj,tstg -55 to +150 c thermal characteristics characteristic symbol max. unit thermal resistance junction to case r thjc 3.125 c/w
electrical characteristics : [ tc = 25 c unless otherwise noted ] characteristic symbol min typ max unit * off characteristics : collector?mitter breakdown voltage [ ic =20 madc, i b = 0 ] v ceo(sus) 60 vdc collector cutoff current [ v cb = 170 vdc, i b = 0 ] i cb0 10 adc collector?ase breakdown voltage [ ic =1madc, i e = 0 ] bv cbo 200 vdc emitter-base breakdown voltage [i e =1ma,i c =0] bv ebo 5 vdc * on characteristics (1): dc current gain [ ic = 1.0 adc , v ce = 5.0 vdc ] [ ic =4 adc , v ce =5.0 vdc ] h fe 30 20 150 collector-emitter saturation voltage [ ic = 3adc , i b = 0.3adc ] v ce(sat) 1 vdc base emitter saturation voltage [ic =4a,i b =0.4a ] v be(sat) 1.5 vdc dynamic characteristics : current gain ?bandwidth product [ic=0.5adc,v ce =5vdc,ftest=1.0 mhz ] f t 10 mhz (1) pulse test : pulse width <300 m s , duty cycle < 2.0%
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